bipolar junction transistor


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Related to bipolar junction transistor: Field effect transistor

bipolar junction transistor

[¦bī‚pōl·ər ‚jəŋk·shən tran′zis·tər]
(electronics)
A bipolar transistor that is composed entirely of one type of semiconductor, silicon. Abbreviated BJT. Also known as silicon homojunction.
References in periodicals archive ?
The bipolar junction transistors feature high collector current ratings and low collector-to-emitter saturation voltages, making these components well suited for a wide range of end-user products that are in high demand today, such as computers, portable consumer electronics, LED lighting, networking and telecommunications, set-top boxes and power supplies.
These bipolar junction transistors have among the highest collector current ratings and the lowest collector-to-emitter saturation voltages on the market today, making these components well suited for a range of end-user products that are in demand today, such as power management circuits, inverters, lighting ballasts, motor and solenoid drivers, buffering and switching regulator circuits, DC-DC converters.
Among the first products to be released in Fairchild's SiC portfolio is a family of advanced SiC bipolar junction transistors (BJTs) that offer high efficiency, high-current density, robustness, and easy high-temperature operation.
5 percent drain efficiency, which is significantly better than the performance of bipolar junction transistors (BJTs) available for this frequency range.
This research service titled Southeast Asian Power Semiconductor Markets offers an in-depth analysis of different types of power discretes and integrated circuits (ICs) such as metal-oxide semiconductor field-effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), bipolar junction transistors (BJTs), battery management ICs, and motor control ICs.
The new patent award, 7,314,799 - "Self-Aligned Trench Field Effect Transistors With Regrown Gates And Bipolar Junction Transistors With Regrown Base Contact Regions And Methods Of Making" enables SemiSouth to eliminate the need for implantation in the fabrication process of SiC power JFETs.
Power devices such as MOSFETs, (metal oxide semiconductor field-effect transistor) bipolar junction transistors (BJT), rectifiers, thyristors and insulated gate bipolar transistors (IGBT) are widely used in cell phone infrastructures, laptop computers, alternative energy vehicles, home appliances, electric trains and more.
The new ESBT family resolves the power supply designer's dilemma of choosing either bipolar junction transistors (BJT), characterised by low conduction losses but slow switching speeds, or MOSFETs, with their fast switching speeds but high conduction losses.