charge trap flash

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charge trap flash

The next generation of flash memory chips that replace the floating gate with thin layers of material that "trap the charge." The charge trap is a sandwich of materials such as silicon-oxide-nitride-oxide-silicon (SONOS), metal-oxide-nitride-oxide-silicon (MONOS) and tantalum-aluminum oxide-nitride-oxide-silicon (TANOS), all of which are substantially smaller than the floating gate.

Charge trap flash chips allow more dense flash memory to be fabricated and are expected to extend the life of NAND flash until a new non-volatile memory technology replaces flash entirely (see future memory chips). See flash memory.

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charge-trapping layer
CTF
future memory chips

MONOS
Sonos
TANOS

SaDPT represents a pivotal advancement beyond the charge trap flash (CTF) technology that Samsung developed for NAND flash last year when it introduced a new material (silicon nitride) and a new structural configuration.

Samsung Reveals World's First 30nm-class 64Gigabit NAND Flash, for ... by Business Wire

For example, the latest flash-memory processes feature advanced technologies, such as charge trap flash (CTF) and multi-level cell (MLC) designs, as well as ever-smaller feature sizes.

TRADE NEWS: Agilent Technologies Reduces Endurance Test Time for ... by Business Wire

nbsp;on charge trap flash (CTF) technology, which Dr.

Samsung Says 3D Silicon Will Drive Boundless Industry Growth in ... by Business Wire

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