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charge trap flash |
Also found in: Wikipedia | 0.03 sec. |
charge trap flashThe next generation of flash memory chips that replace the floating gate with thin layers of material that "trap the charge." The charge trap is a sandwich of materials such as silicon-oxide-nitride-oxide-silicon (SONOS), metal-oxide-nitride-oxide-silicon (MONOS) and tantalum-aluminum oxide-nitride-oxide-silicon (TANOS), all of which are substantially smaller than the floating gate. How to thank TFD for its existence? Tell a friend about us, add a link to this page, add the site to iGoogle, or visit webmaster's page for free fun content. |
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SaDPT represents a pivotal advancement beyond the charge trap flash (CTF) technology that Samsung developed for NAND flash last year when it introduced a new material (silicon nitride) and a new structural configuration. For example, the latest flash-memory processes feature advanced technologies, such as charge trap flash (CTF) and multi-level cell (MLC) designs, as well as ever-smaller feature sizes. nbsp;on charge trap flash (CTF) technology, which Dr. |
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