The photovoltage generated across the p-n junction depletion region
has no effect on the detector characteristics.
It is found that the depletion should be extend more, but high drain doping limits the depletion region
consequently enhance the punch through voltage.
While a learner is becoming familiar with the concept of minority and majority carriers, the process of how the depletion region
is produced is illustrated in the system's demonstration.
By this is meant that voltage drop across the depletion region
can not exceed [V.
When the voltage bias is applied, a depletion region
in the n-doped GaAs layer with lower charge carrier density is formed.
As the bias voltage decreases, majority carriers get pushed away from the oxide interface, and the depletion region
At equilibrium, the dispersion in the good region of a DPD is a "5" whereas it is usually a "1" in the bridging and depletion regions
The size and shape of the depletion region
is also affected by charges trapped in surface states or other deep levels that, under DC conditions, may change with applied voltage.
Figure 12 shows the behavior of depletion region
versus the impurities density of the n-type [delta]-doped quantum-well [N.
The current density of the p-n junction depletion region
operating at high-level injection can be presented by the following approximate equation [6, 7]
The box height changes due to the device recess geometry, gate depletion region
and transfer of carriers into the buffer or substrate.
In this condition, the depletion region
of the FET due to the Schottky contact is small and the channel is filled with free charge carriers.