diffused-base transistor

diffused-base transistor

[də¦fyüzd ¦bās tran′zis·tər]
(electronics)
A transistor in which a nonuniform base region is produced by gaseous diffusion; the collector-base junction is also formed by gaseous diffusion, while the emitter-base junction is a conventional alloy junction.
References in periodicals archive ?
The earliest practical form was the grown junction transistor in 1950, which was followed in 1952 by the alloy junction transistor, the diffused-base transistor (1955), and the epitaxial transistor (1960).