dopant


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dopant

[′dō·pənt]
(electronics)

dopant

An element diffused into pure silicon in order to alter its electrical characteristics and make it more conductive. Boron, phosphorous, antimony and arsenic are common dopants. See doping.
References in periodicals archive ?
The dopant, a ruthenium-containing compound, is a reducing agent, which means it adds electrons to the organic semiconductor as part of the doping process.
ZnO thinfilms have been fabricated with tin as dopant at different molar concentrations.
I will use an ensemble of spins of bismuth dopants implanted in silicon as a quantum memory.
This material consists of iron and oxide as major elements along with divalent and trivalent dopant.
In this work, we have studied the electrical transport and morphological properties of self-assembled CSA doped polyaniline nanostructures at low temperatures by varying the dopant to monomer molar ratio to control the morphology, crystallinity, optical properties, and dc conductivity of the nanostructures.
These include anodic passivation, surface ennobling, mediation of oxygen reduction, cathodic protection, barrier protection after initial galvanic coupling, and an intelligent dopant release mechanism.
Our crosslinkable plasticized-host materials further simplify the fabrication process by enabling low temperature diffusion of image-wise-printed blue, red, and green dopants without assistance of solvent for the production of large-size-full-color displays.
Several epitaxial layers with different dopant doping levels were deposited on a silicon substrate by the vapour phase epitaxy.
Stegemeyer demonstrated that the polarization power (Ps) of 'Type II' dopant varies with the structure of the achiral host.
An article comprising: a support matrix; a photoactive monomer; a photoinitiator; and a dynamic range enhancing dopant which is bound to the support matrix by an immobilizing group; wherein the dynamic range enhancing dopant comprises a radical trap group and an immobilizing group, and wherein the article has a dynamic range that is at least 1.
UCL Business PLC has been awarded a patent for a method of producing thermo-chromic vanadium oxide by atmospheric pressure chemical vapor deposition comprised of the steps of mixing together a vanadium precursor, an oxygen precursor, and, optionally, a transition metal dopant precursor in the presence of an inert gas to form a precursor mixture; reacting together the precursors of the precursor mixture in an atmospheric pressure chemical vapour deposition reactor; and depositing the ther-mochromic vanadium (IV) oxide, characterized in that the vanadium concentration in the precursor mixture is, before reaction, less than 1x10-3 mol/dm3; and the oxygen concentration in the precursor mixture is, before reaction, less than lx10-2 mol/dm3.
The dopant makes the graphene film more conductive and increases the electric field potential inside the cell," said Xiaochang Miao, a graduate student in the physics department.