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enhancement-mode high-electron-mobility transistor |
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enhancement-mode high-electron-mobility transistor [en′hans·mənt ¦mōd ′hī i¦lek‚trän mō¦bil·əd·ē tran′zis·tər] (electronics) A high-electron-mobility transistor in which application of a positive bias to the gate electrode is required for current to flow between the source and drain electrodes. Abbreviated E-HEMT. How to thank TFD for its existence? Tell a friend about us, add a link to this page, add the site to iGoogle, or visit webmaster's page for free fun content. |
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