gallium arsenide


Also found in: Dictionary, Financial, Acronyms, Wikipedia.
Related to gallium arsenide: Gallium Arsenide Laser

gallium arsenide

[′gal·ē·əm ′ärs·ən‚īd]
(inorganic chemistry)
GaAs A crystalline material, melting point 1238°C; frequently alloys of this material are formed with gallium phosphide or indium arsenide.

gallium arsenide

An alloy of gallium and arsenic compound (GaAs) that is used as the base material for chips. Several times faster than silicon, it is used in high frequency applications such as cellphones, DVD players and fiber optics. In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost. See gallium nitride.
References in periodicals archive ?
The thing that gets me excited about this is there's a huge amount of potential for being able to put silicon and gallium arsenide and other materials like that on the same chip.
Gailon Brehm, TriQuint's military business unit director said, "TriQuint currently supplies high volume, cost effective foundry services and standard products based on high voltage gallium arsenide.
Ramdani began wondering whether the STO would serve the same function for gallium arsenide.
In one such effort, Ralph Jimenez and his coworkers at the University of California, San Diego are using X-ray diffraction techniques to measure changes in the spacing of atoms in laser-blasted gallium arsenide.
By growing gallium arsenide crystals nearly 25 percent purer than those previously made, the group recorded a maximum electron speed of 14.
Our new EDGE PA module includes a superior power controller which, in conjunction with the gallium arsenide (GaAs) HBT (heterojunction bipolar transistor) amplifier, provides consistent AM/AM (amplitude to amplitude) and AM/PM (amplitude to phase) characteristics over temperature, frequency, input power, and battery voltage," said Paul Cooper, TriQuint Semiconductor Product Marketing Manager.
Called a microcavity resonator, the device consists of a ring or disk made from layered gallium arsenide and aluminum gallium arsenide.
The device constructed by the group consists of an extremely thin film of indium gallium arsenide, 10 nanometers across, sandwiched between layers of gallium arsenide.
Gallium nitride offers a five-fold improvement in power density compared to gallium arsenide devices, and makes it ideal for high power radar and communications applications," said Mr.
However, Shih and his colleagues have found a way to deposit a flat silver film on gallium arsenide, a metal and a semiconductor with very different atomic characteristics.