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gallium arsenide field-effect transistor |
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gallium arsenide field-effect transistor [′gal·ē·əm ′ärs·ən‚īd ′fēld i¦fekt tran′zis·tər] (electronics) A field-effect transistor in which current between the ohmic source and drain contacts is carried by free electrons in a channel consisting ofn-type gallium arsenide, and this current is modulated by a Schottky-barrier rectifying contact called the gate that varies the cross-sectional area of the channel. Abbreviated GaAs FET. How to thank TFD for its existence? Tell a friend about us, add a link to this page, add the site to iGoogle, or visit webmaster's page for free fun content. |
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