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gallium arsenide semiconductor

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gallium arsenide semiconductor [¦gal·ē·əm ¦ärs·ən‚īd ′sem·i·kən‚dək·tər]
(solid-state physics)
A semiconductor having a forbidden-band gap of 1.4 electronvolts and a maximum operating temperature of 400°C when used in a transistor.


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In addition, Filtronic has just recruited, as director of technology, professor Chris Snowden who Filtronic describes as a world leading expert in the field of gallium arsenide semiconductors.
To make gallium arsenide semiconductor wires, the researchers fill the glass capillaries with a liquid gallium compound.
In addition, this funding is intended for the planned upgrade of our CPL light source to achieve 45 watts of x-ray power, a level that should result in the 5 wafer-per-hour throughput we believe will be very attractive to customers in the high-speed gallium arsenide semiconductor market.
 
 
 
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