gold doping

gold doping

[′gōl ‚dōp·iŋ]
(electronics)
A technique for controlling the lifetime of minority carriers in a transistor; gold is diffused into the base and collector regions to reduce storage time in transistor circuits.
References in periodicals archive ?
The advantage of the platinum doping process is to reduce leakage current by approximately 100 times, compared to gold doping, providing scope to improve VF at a given trr.
The modern design is easily faster than the traditional design such that minority-carrier lifetime control using gold doping is not necessary.
Gold doping also minimizes the temperature sensitivity of the reverse recovery time (trr), resulting in improved switching performance at elevated operating temperatures.