high-electron-mobility transistor


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high-electron-mobility transistor

[′hī i′lek‚trän mō¦bil·əd·ē tran‚zis·tər]
(electronics)
A type of field-effect transistor consisting of gallium arsenide and gallium aluminum arsenide, with a Schottky metal contact on the gallium aluminum arsenide layer and two ohmic contacts penetrating into the gallium arsenide layer, serving as the gate, source, and drain respectively. Abbreviated HEMT. Also known as heterojunction field-effect transistor (HFET); modulation-doped field-effect transistor (MODFET); selectively doped heterojunction transistor (SDHT); two-dimensional electron gas field-effect transistor (TEGFET).
References in periodicals archive ?
The SKY67159-396LF single-stage gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) LNA available in a compact 2mm x 2mm x 0.
Now, APC Novacom stocks all Cree RF devices that do not need a European Union (EU) license, consisting of gallium nitride (GaN) high-electron-mobility transistor (HEMT) die, and supports Cree s European market through both volume distribution and small-volume stock for network representatives.
Mitsubishi Electric Corp, Tokyo-based, has formulated the MGFK47G3745 gallium nitride (GaN) high-electron-mobility transistor (HEMT) Ku-band (12 18GHz) amplifier for satellite earth stations.
All current gallium arsenide (GaAs), metal-semiconductor field effect transistor (MESFET) and high-electron-mobility transistor (HEMT) devices operate from a positive voltage supply, but need a negative voltage polarity to switch them on.
It uses Agilent second-generation pseudomorphic high-electron-mobility transistor (PHEMT), advanced silicon bipolar, and film bulk acoustic resonator (FBAR) processes to achieve a flexible, efficient and compact solution.
1) code division multiple access (2) advanced mobile phone service (3) personal communications system (4) pseudomorphic high-electron-mobility transistor (5) film bulk acoustic resonator

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