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hometaxial-base transistor

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hometaxial-base transistor [′häm·ə‚tak·sē·əl ‚bās tran′zis·tər]
(electronics)
Transistor manufactured by a single-diffusion process to form both emitter and collector junctions in a uniformly doped silicon slice; the resulting homogeneously doped base region is free from accelerating fields in the axial (collector-to-emitter) direction, which could cause undesirable high current flow and destroy the transistor.


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