hot electron


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hot electron

[′hät i′lek‚trän]
(electronics)
An electron that is in excess of the thermal equilibrium number and, for metals, has an energy greater than the Fermi level; for semiconductors, the energy must be a definite amount above that of the edge of the conduction band.
References in periodicals archive ?
An integral part of the SP&R solution, SE-PKS offers a holistic approach to correcting signal integrity by addressing the most comprehensive set of effects, including: crosstalk, voltage drop, wire self-heat, hot electron, and electromigration.
To achieve fast writing speed for the AG-AND flash memory cell, the research team changed the programming method from conventional Fowler-Nordheim (F-N) tunneling to source-side hot electron injection.
An integral part of the SP&R solution, SE-PKS offers a holistic approach to correcting signal integrity by addressing the most comprehensive set of effects including: crosstalk, voltage drop, wire self-heat, hot electron, and electromigration.
EPROM-Flash technologies have been unable to support sub-5V erase/write operation because of the high-current hundreds of microAmps per cell Channel Hot Electron (CHE) mechanism and the need to increase already slow programming time (from one to 30 seconds per block or sector for 5V operation).
However, combining the film with better light-trapping technology such as nanowire structures - could significantly increase efficiency in an ultra-thin hot electron solar cell technology.
To address the most difficult aspect in scaling for traditional SONOS technology -- when the channel length becomes smaller -- UMC uses an innovative method in its program current as opposed to the hot electron method used by conventional SONOS.
Programming of each bit is performed by hot electron injection, erase is performed by band to band tunneling, and read by the reverse read mechanism.
High-speed writing High-speed memory cell programming at a low voltage have been made possible by the hot electron injection method(5) used with the 1-Gbit product.
Sunyaev and Zel'dovich predicted that hot electron gas in clusters scatters the CMBR, creating spectral distortions.
Motorola's papers at the NVM Workshop include: - "Warm Carrier Programming of Si Nanocrystalline Memories" - "Local Charge Storage in Silicon Nanocrystalline Memories" - "An Embedded 90nm SONOS flash EEPROM Utilizing Hot Electron Injection Programming and 2-sided Hot Hole Injection Erase" - "Validation of a Predictive SONOS Model"
The demonstration of this hot electron transfer establishes that a highly efficient hot carrier solar cell is not just a theoretical concept, but an experimental possibility.
NOR cell uses source-side hot electron injection, which is a thousand