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impact ionization

   Also found in: Wikipedia 0.01 sec.
impact ionization [′im‚pakt ‚ī·ə·nə′zā·shən]
(electronics)
Ionization produced by the impact of a high-energy charge carrier on an atom of semiconductor material; the effect is an increase in the number of charge carriers.


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the Tunneling Field Effect Transistor (TFET), vertical Impact Ionization MOSFET (vertical I-MOS), and lateral Impact Ionization MOSFET (lateral I-MOS).
However, at the relatively low energies of solar photons, subtleties related to electron motion largely prevent the exciton-to-electron energy transfers, so only negligible impact ionization occurs, Nozik notes.
The Agilent 5975B features an inert ion source to perform well with active compounds, and the standard ionization source performs both electron impact ionization and chemical ionization (CI).
 
 
 
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