impact ionization


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impact ionization

[′im‚pakt ‚ī·ə·nə′zā·shən]
(electronics)
Ionization produced by the impact of a high-energy charge carrier on an atom of semiconductor material; the effect is an increase in the number of charge carriers.
References in periodicals archive ?
the Tunneling Field Effect Transistor (TFET), vertical Impact Ionization MOSFET (vertical I-MOS), and lateral Impact Ionization MOSFET (lateral I-MOS).
However, at the relatively low energies of solar photons, subtleties related to electron motion largely prevent the exciton-to-electron energy transfers, so only negligible impact ionization occurs, Nozik notes.
About a decade ago, Nozik began to suspect that the smallness of quantum dots might make impact ionization a fruitful process at solar-radiation energies.
Analytical methods to detect volatile NA are based on gas chromatography (GC) with a thermal energy analyser (TEA) [16, 21, 22], with mass spectrometry (MS) by electron impact ionization (EI) [23-25], and with mass spectrometry by chemical ionization [26-29].
Intensities (%) of the N-nitrosamine ions observed with electron impact ionization in the present work and in NIST Database (relative to the most intensive peak) N-nitrosamine Present work, NIST Database [37], m/z, m/z, Rel.
The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices.
Electron and photon impact ionization and related topics 2002; proceedings of the international conference, Metz, 18-20 July 2002.
157), might exhibit the effect, called impact ionization.
13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation
This is the simplest problem of impact ionization you can do, and it's extremely difficult," says molecular physicist Lee A.
The Agilent 5975B features an inert ion source to perform well with active compounds, and the standard ionization source performs both electron impact ionization and chemical ionization (CI).
With a new flow-control system that automatically adjusts reagent gas flow and allows automated tuning of the ion source, the Agilent 5975 makes chemical ionization as routine as electron impact ionization, while improving overall sensitivity.