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indirect-band-gap semiconductor |
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indirect-band-gap semiconductor [‚in·də′rekt ′band ‚gap ′sem·i·kən¦dək·tər] (solid-state physics) A semiconductor material in which the state of minimun energy in the conduction band and the state of maximum energy in the valence band have different momenta, and consequently optical transitions between free electrons and holes are forbidden. How to thank TFD for its existence? Tell a friend about us, add a link to this page, add the site to iGoogle, or visit webmaster's page for free fun content. |
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