insulated-gate bipolar transistor


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insulated-gate bipolar transistor

[¦in·sə‚lād·əd‚gāt bī‚pō·lər tran′zis·tər]
(electronics)
A power semiconductor device that combines low forward voltage drop, gate-controlled turnoff, and high switching speed. It structurally resembles a vertically diffused MOSFET, featuring a double diffusion of a p-type region and an n-type region, but differs from the MOSFET in the use of a p + substrate layer (in the case of an n-channel device) for the drain. The effect is to change the transistor into a bipolar device, as this p-type region injects holes into the n-type drift region. Abbreviated IGBT.
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They have retained the basic physics of classic devices and added material on such areas of contemporary interest as three-dimensional MOSFETs (metal-oxide-semiconductor field-effect transistors), nonvolatile memory, modulation-doped field effect transistor, single-electron transistor, resonant-tunneling diode, insulated-gate bipolar transistor, quantum cascade laser, and semiconductor sensors.
Dana's exhibit -- located at hall 27, stand B71, at Hannover Fairgrounds -- will feature a full range of fuel-cell products and thermal-management systems, including molded graphite composite bipolar plates, catalytic reactors for hydrogen reforming, fuel-cell balance-of-plant components, lithium-ion battery coolers, and insulated-gate bipolar transistor (IGBT) coolers for power electronics applications.
The Information Network sees insulated-gate bipolar transistor (IGBT) and power metal-oxide-semiconductor field-effect transistor (MOSFET) as the main growth drivers of the overall power semiconductor market.
to collaborate on insulated-gate bipolar transistor (IGBT) technology and products for hybrid electric and electric vehicles (HEV and EV).
However, the ratings of self-commutating switches such as the Insulated-Gate Bipolar Transistor (IGBT) and Integrated Gate-Commutated Thyristor (IGCT), are reaching levels that make the technology possible for very high power applications.
4-amp-output half-bridge gate drive optocoupler designed specifically for low-power (up to 25A) motor-control-inverter applications, such as air conditioners and washing machines using inverters based on insulated-gate bipolar transistor (IGBTs).
Specifically designed for the harsh conditions of traction applications, the frequency inverter is equipped with the latest generation of insulated-gate bipolar transistors (IGBTs) for voltages up to 6.
Large three-phase inverters with power ratings above 500W generally drive the demand for high-power discrete semiconductors, such as insulated-gate bipolar transistors (IGBTs), because of their better performance at high temperatures.
The award-winning MicReD Industrial Power Tester 1500A can perform power cycling tests of metal-oxide semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs) and power diodes.
These SiC Power MOSFETs are the next step vs traditional silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs), for all applications in power conversion running at a frequency ≥ 100 kHz.
600V insulated-gate bipolar transistors (IGBTs) from International Rectifier, optimized for a complete power range spectrum, are suitable for a wide range of switching frequencies and deliver higher system efficiency and rugged transient performance.
Insulated-gate bipolar transistors (IGBT) and metal oxide semiconductor field-effect transistors (MOSFETs) are chief contributors to revenues, and are replacing traditional solutions such as bipolar junction transistors and thyristors.

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