They have retained the basic physics of classic devices and added material on such areas of contemporary interest as three-dimensional MOSFETs (metal-oxide-semiconductor field-effect transistors), nonvolatile memory, modulation-doped field effect transistor, single-electron transistor, resonant-tunneling diode, insulated-gate bipolar transistor
, quantum cascade laser, and semiconductor sensors.
Dana's exhibit -- located at hall 27, stand B71, at Hannover Fairgrounds -- will feature a full range of fuel-cell products and thermal-management systems, including molded graphite composite bipolar plates, catalytic reactors for hydrogen reforming, fuel-cell balance-of-plant components, lithium-ion battery coolers, and insulated-gate bipolar transistor
(IGBT) coolers for power electronics applications.
The Information Network sees insulated-gate bipolar transistor
(IGBT) and power metal-oxide-semiconductor field-effect transistor (MOSFET) as the main growth drivers of the overall power semiconductor market.
to collaborate on insulated-gate bipolar transistor
(IGBT) technology and products for hybrid electric and electric vehicles (HEV and EV).
However, the ratings of self-commutating switches such as the Insulated-Gate Bipolar Transistor
(IGBT) and Integrated Gate-Commutated Thyristor (IGCT), are reaching levels that make the technology possible for very high power applications.
4-amp-output half-bridge gate drive optocoupler designed specifically for low-power (up to 25A) motor-control-inverter applications, such as air conditioners and washing machines using inverters based on insulated-gate bipolar transistor
Specifically designed for the harsh conditions of traction applications, the frequency inverter is equipped with the latest generation of insulated-gate bipolar transistors
(IGBTs) for voltages up to 6.
Large three-phase inverters with power ratings above 500W generally drive the demand for high-power discrete semiconductors, such as insulated-gate bipolar transistors
(IGBTs), because of their better performance at high temperatures.
The award-winning MicReD Industrial Power Tester 1500A can perform power cycling tests of metal-oxide semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors
(IGBTs) and power diodes.
These SiC Power MOSFETs are the next step vs traditional silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors
(IGBTs), for all applications in power conversion running at a frequency ≥ 100 kHz.
600V insulated-gate bipolar transistors
(IGBTs) from International Rectifier, optimized for a complete power range spectrum, are suitable for a wide range of switching frequencies and deliver higher system efficiency and rugged transient performance.
Insulated-gate bipolar transistors
(IGBT) and metal oxide semiconductor field-effect transistors (MOSFETs) are chief contributors to revenues, and are replacing traditional solutions such as bipolar junction transistors and thyristors.