The detector circuitry uses high performance GaAs Schottky Barrier Beam lead diodes with very low junction capacitance
The detector circuitry utilizes high performance GaAs Schottky Barrier Beam lead diodes with very low junction capacitance
The SOI technology is gaining high popularity in the semiconductor industry due to their benefits of low power consumption and junction capacitance
While you can achieve the same thing more economically by putting multiple transistors in parallel, you would have a hard time achieving as low of junction capacitance
Fully compatible with digital transmission standards such as ADSL2 and ADSL2+, the SMP80MC family of micro-capacitance transient surge arrestors is the first TRISIL series for which the junction capacitance
does not depend on the device breakdown voltage.
For a detector shunt resistance of 1 k[omega] and a junction capacitance
of 1 nF, the equivalent impedance was resistive and approached 400 M[omega] up to 10 Hz.
SOI wafers are gaining high popularity in the semiconductor industry due to their benefits of low power consumption and junction capacitance
The detector circuits use high performance GaAs Schottky Barrier Beam lead diodes with extremely low junction capacitance
Transistors created using SoS technology also have much lower junction capacitance
and thus have fewer non-linearities at high frequencies than those manufactured with standard CMOS processes.
The diode array's combination of fast switching speed and low junction capacitance
makes it ideal for preserving high-speed signal integrity while its high current rating of 225mA continuous and 625mA peak provides a healthy margin for general light duty rectification applications.
This new product offers unprecedented recovery time performance while exhibiting only 9pF of junction capacitance
per die, making it ideal for RF frequency protection circuits, high frequency rectification, voltage multipliers and gate driver circuits.
In addition, SOI is better suited for low-power and low-voltage applications than bulk silicon because of low parasitic junction capacitance
and superior transistor on-off characteristics.