magnetic tunnel junction


Also found in: Acronyms.

magnetic tunnel junction

[mag¦ned·ik ′tən·əl ‚jəŋk·shən]
(electronics)
A magnetic storage and switching device in which two magnetic layers are separated by an insulating barrier, typically aluminum oxide, that is only 1-2 nanometers thick, allowing an electronic current whose magnitude depends on the orientation of both magnetic layers to tunnel through the barrier when it is subject to a small electric bias.
References in periodicals archive ?
the pioneer in spin-transfer torque memory (STT-RAM) development, today announced the first magnetic tunnel junction (MTJ) fabrication facility (Fab) in the United States dedicated to STT-RAM memory technology.
This merger will give us greater access to the equity market and recognition in the financial community for our strong leadership position in applying Giant Magnetoresistive (GMR) materials and Magnetic Tunnel Junction (MTJ) devices to magnetic sensors, isolators and Magnetoresistive Random Access Memory (MRAM).
The patents build on other Grandis patents covering innovative magnetic tunnel junction (MTJ) materials and structures including dual MTJ structures.
Motorola's MRAM cells are based on a single transistor and magnetic tunnel junction (MTJ) structure in which the MTJ is integrated on top of the transistor to achieve a small cell size.
After a historical overview, coverage in 38 chapters encompasses magnetic metallic multilayers, magnetic tunnel junctions, semiconductors, the nanoscale, and applications.
The 16 oral and poster papers cover dilute magnetic semiconductor and oxides, magnetic resistive RAM, single-spin dynamics/DMS I, spintronics materials, magnetic tunnel junctions and dynamics, spintronics transport and imaging, and multi-ferroic materials and oxides.
NEC's MFF operations were produced by integrating data flip flop (DFF) with magnetic tunnel junctions (MTJ), in addition to circuits that switch the direction of MTJ's magnetization.
He is an inventor with over 177 US patents and 25 pending applications in thin film magnetic materials and processing, spin valve sensors, magnetic tunnel junctions, nanostructures and photovoltaic cells.
Our battery-backup MRAM cell utilizes three transistors and two magnetic tunnel junctions (3T-2MTJ) per bit.
Tunnel junctions, also known as magnetic tunnel junctions (MTJs) or tunneling magnetic junctions (TMJs), allow the esoteric property of electron spin to be sensed as electrical resistance for interface to conventional electronics.