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metal oxide semiconductor |
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metal oxide semiconductorSee MOS. metal oxide semiconductor [′med·əl ¦äk‚sīd ′sem·i·kən‚dək·tər] (solid-state physics) A metal insulator semiconductor structure in which the insulating layer is an oxide of the substrate material; for a silicon substrate, the insulating layer is silicon dioxide (SiO2). Abbreviated MOS.
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Today complementary metal oxide semiconductor (CMOS) chips are the foundation for computing applications; silicon germanium (SiGe) bipolar chips provide radio frequency communications and analog functions. The agreement includes Complementary Metal Oxide Semiconductor (CMOS) and Silicon-on-Insulator (SOI) technologies as well as advanced semiconductor research and design enablement transitioning at the 45-nanometer generation. While some opt for a Si-Ge RF front-end process to obtain enhanced performance, others are trying a complementary metal oxide semiconductor (CMOS) based front-end process. |
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