metal semiconductor field-effect transistor

metal semiconductor field-effect transistor

[′med·əl ′sem·i·kən‚dək·tər ′fēld i‚fekt tran′zis·tər]
(electronics)
A field-effect transistor that uses a thin film of gallium arsenide, with a Schottky barrier gate formed by depositing a layer of metal directly onto the surface of the film. Abbreviated MESFET.
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The company produces gallium arsenide (GaAs) field-effect transistors (FETs), modules and monolithic microwave integrated circuits (MMICs) using hetero-bipolar transistor (HBT), pseudomorphic high electron mobility transistor (PHEMT), metal semiconductor field-effect transistor (MESFET) and heterostructure FET (HFET) technologies.
Conexant's RFIC designs are based on the company's industry-leading silicon germanium (SiGe), bipolar complementary semiconductor oxide semiconductor (BiCMOS), silicon bipolar (SiBipolar), mixed signal CMOS, RFCMOS, gallium arsenide heterojunction bipolar transistor (GaAs HBT) and metal semiconductor field-effect transistor (MeSFET) process technologies.