metal-nitride-oxide semiconductor

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metal-nitride-oxide semiconductor [′med·əl ¦nī‚trīd ¦äk‚sīd ′sem·i·kən‚dək·tər]

(solid-state physics)

A semiconductor structure that has a double insulating layer; typically, a layer of silicon dioxide (SiO₂) is nearest the silicon substrate, with a layer of silicon nitride (Si₃N₄) over it. Abbreviated MNOS.

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