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metal-organic chemical vapor deposition

   Also found in: Acronyms 0.01 sec.
metal-organic chemical vapor deposition [′med·əl ȯr′gan·ik ′kem·ə·kəl ′vā·pər ‚dep·ə′zish·ən]
(solid-state physics)
A technique for growing thin layers of compound semiconductors in which metal organic compounds, having the formula MRx, where M is a group III metal and R is an organic radical, are decomposed near the surface of a heated substrate wafer, in the presence of a hydride of a group V element. Abbreviated MOCVD.


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NLO was used to compare the optical and structural properties of GaN bulk crystals grown by high-pressure processing, and thin films of the material grown by hydride vapor phase epitaxy, metal-organic chemical vapor deposition, and molecular beam epitaxy.
Using advanced device manufacturing techniques based on metal-organic chemical vapor deposition (MOCVD), 23 companies in the region produced the equivalent of 13.
ISMT's high-k milestone was achieved in January 2003 by the Advanced Gate Clean project team (Naim Moumen (IBM) and Joel Barnett (ISMT)) using an innovative etch process to remove hafnium dioxide (HfO2) deposited by metal-organic chemical vapor deposition and atomic layer deposition processes.
 
 
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