oxide isolation

oxide isolation

[′äk‚sīd ‚ī·sə′lā·shən]
(electronics)
Isolation of the elements of an integrated circuit by forming a layer of silicon oxide around each element.
References in periodicals archive ?
Complete oxide isolation of the active devices from the substrate eliminates the substrate current injection path.
SOI technology provides 'true' oxide isolation, which is a more rugged isolation than alternative junction isolation.
In addition, they offer improved thermal properties because LDMOS devices do not require a beryllium oxide isolation layer in the package.
The principle applications are high-rate etching (greater than 30 micron/min) of deep cavities that encapsulate MEMS devices, and etching deep trenches stopping on an oxide isolation layer.