point defect


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Related to point defect: Frenkel defect, line defect

point defect

[′pȯint di‚fekt]
(crystallography)
A departure from crystal symmetry which affects only one, or, in some cases, two lattice sites.
References in periodicals archive ?
By creating point defects the periodicity of the crystal is broken and it allows the propagation of light into the band gap.
Peiser, Symmetry Conditions on Jump Rates Occurring in Relaxation Times Associated with Point Defect Motion Between Equivalent General Sites in Crystals, J, Phys.
Point defects have big implications on nanotube applications, said Z.
The guide also covers basic concepts in the chemistry and physics of defects, links principles to real-world applications, covers cutting-edge applications, and includes chapters on point defect chemistry, linear and planar defects, diffusion in solids, magnetic and optical defects, and more.
Numerous diagrams display the results of calculating point defect concentrations for a series of pure and doped oxides of transition metals with varying M/O ratios, crystallographic structure, and point defect structure.
Essays are grouped into categories covering point defect relaxation and diffusion, dislocation dynamics, grain boundaries, nanocrystaline structures and thin films, phase transformations, amorphous materials, and high and low dampening techniques.
The twelve contributions that make up the main body of the text cover a variety of related subjects including, the growth and characterization of silicon-germanium alloys, self-interstitials in silicon and germanium, point defect complexes in silicon, and others.
Point Defects in Group IV Semiconductors: Common Structural and Physico-Chemical Aspects
3] films (Figure 1), causes the formation of a high density of associated states and point defects and incomplete bonds with high density grain boundaries, which are responsible for the low mobility values measured in this kind of samples, and for the formation of localized states allowing electrical transport via hopping.
The areas are multi-crystalline silicon for solar cells; advanced semiconductor materials; impurities and point defects in silicon and SiGe; modeling and simulating growth, gettering, and characterization; defect aspects and engineering; characterizing defects and impurities; nanostructures and new devices; and silicon-based optoelectronics and defect luminescence.