The BMR465 powertrain guarantees high efficiency and reliability and is built from the latest generation of power transistor
semiconductors, enabling the module to deliver up to 94.
com/research/82bpjk/global_power) has announced the addition of the "Global Power Transistor
Market Report" report to their offering.
Tokyo, Dec 10, 2009 - (JCN Newswire) - NEC Corporation (NEC) and NEC Electronics Corporation (NECEL) today announced the development of a nitride semiconductor(1) power transistor
on a silicon (Si) substrate that has improved the control and suppression of electrical currents when electrical power is turned off (normally-off characteristics(2)), a necessary feature for the safe operation of consumer electronics and IT devices.
The Inverpower DC (direct current) power delivery systems using power transistor
(Insulated Gate Bipolar Transistor or IGBT) technology was introduced in the late 1990's and is obtaining increasing acceptance in industrial markets, according to SatCon.
Tokyo, Japan, Oct 18, 2005 - (JCNN) - Oki Electric Industry announced on October 17 that it has developed a power transistor
with dramatically improved amplifying characteristics, in collaboration with the Research Center for Micro-Structure Devices at the Nagoya Institute of Technology.
com/research/p7t78t/epc2010_gan_200v) has announced the addition of the "EPC2010 GaN 200V Power Transistor
Reverse Costing Analysis" report to their offering.
Amid this environment, Panasonic announced the commercialization of a new generation power transistor
in May 2015.
TechNavio's analysts forecast the Global Power Transistor
market to grow at a CAGR of 7.
is generally known, today announced the development of a Gallium Nitride (GaN) power transistor
with the ultra high breakdown voltage over 10000V.
com/research/14410f/epc2010_gan_200v_p) has announced the addition of System Plus Consulting's "EPC2010 GaN 200V Power Transistor
Reverse Costing Analysis" report to their extensive offering of technology market research publications.
In the MOSFET power transistor
segment, the company enlarged its market share by 1.
Operating across the 420 to 470 MHz band, the HVV0405-175 offers UHF system designers a fully qualified 175W RF power transistor
with unsurpassed gain and ruggedness specifications.