The BA-DPA has been designed by using push-pull transistor
(CGH40090PP) that includes 2 pieces 45 W transistor in a single package.
Each signal is then divided by the branch-line coupler into two parts of nearly the same amplitude and with a 90[degrees] phase difference to drive each side of the push-pull transistor
amplifier, thus implementing the balanced design.
The study has been carried out on a 180 W high power push-pull transistor
For applications requiring higher peak and average power, the MRF21180 is an internal impedance-matched push-pull transistor
that provides 160 XV peak power and 24 W average power while meeting the wideband CDMA mask.
Besides converting RF from unbalanced to balanced to drive the push-pull transistor
, these baluns also provide impedance transformation from 50 to 12.