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| Tokyo, Japan, July 14, 2006 - (JCN Newswire) - NEC Corporation today announced that it has succeeded in developing new magnetoresistive random access memory (MRAM) cell technology suitable for high speed memory macro embedded in next generation system LSIs. A new solution for fast computer memory, Magnetic Random Access Memory (MRAM), appears well suited for certain mobile applications where speed, non-volatility and low power are all important, IBM researchers say. Where does a hypothetical application with very high capacity, random access that is infrequently referenced optimally reside? |
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