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random access memory |
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| Tokyo, Japan, July 14, 2006 - (JCN Newswire) - NEC Corporation today announced that it has succeeded in developing new magnetoresistive random access memory (MRAM) cell technology suitable for high speed memory macro embedded in next generation system LSIs. Current electronic devices rely mainly on two types of on-chip memory--static random access memory and dynamic random access memory, which is more compact. Advanced Magnetoresistive Random Access Memory Product Garners Award for Innovation in Non-Volatile Memory Technology |
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