saturation current


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saturation current

[‚sach·ə′rā·shən ¦kə·rənt]
(electronics)
In general, the maximum current which can be obtained under certain conditions.
In a vacuum tube, the space-charge-limited current, such that further increase in filament temperature produces no specific increase in anode current.
In a vacuum tube, the temperature-limited current, such that a further increase in anode-cathode potential difference produces only a relatively small increase in current.
In a gaseous-discharge device, the maximum current which can be obtained for a given mode of discharge.
In a semiconductor, the maximum current which just precedes a change in conduction mode.
(nucleonics)
The ionization current in a gas tube when the applied potential is large enough to collect all ions produced by ionizing radiation.
References in periodicals archive ?
In order to obtain the voltage and current relationship of a PV cell, the photocurrent and reverse bias saturation currents in (2) need to be defined.
Device parameters such as reverse saturation current (Is) and ideality factor [eta] can be found on the semilog-scale of the forward characteristic of the diode.
Measuring the diode voltage at two currents is equivalent to the ADI or TI approach--the saturation current drops out of the equation.
The reverse saturation current changes with solar irradiance and temperature is described as shown in Eqn.
0], which is very close to the reverse saturation current [I.
The temperature dependence of the saturation current of the specific diode used in this design is shown in Figure 6.
13) is defined as a proportional mismatch in the collector transport saturation current [I.
Face saturation current and parking for the increased activity (25-30%) of the site hopitalde Hautepierre 2018 HUS want to create Silo parking on part of the site of parkingactuel .
SCR]--Short circuit current; under STC; I-V--Panel output crrent and voltage; IOS--Panel dark saturation current, which depends strongly on temperature (A); IOR--Panel saturation current, which depends on [T.
The values of other transistor model parameters such as the emitter junction saturation current ([i.
The nonlinear model for the Schottky-barrier diodes included saturation current, ideality constant, built-in voltage, breakdown voltage, series resistance and junction capacitance as a function of forward and reverse voltages.