IPDiA), a 3D silicon capacitor
technology pioneer headquartered in France, and IPDiA has become a subsidiary of Murata as October 17.
M2 EQUITYBITES-October 13, 2016-Murata to Acquire French 3D Silicon Capacitor
Furthermore, IPDiA RFID Silicon capacitor
range has been fine tuned in order to reach SRF higher than 1.
a wholly-owned subsidiary of Murata is about to acquire IPDiA, a 3D silicon capacitor
technology pioneer headquartered in France, and IPDiA will become a subsidiary of Murata.
The unique vertical silicon capacitor
technology developed by IPDiA, provides industry-leading performance particularly in terms of capacitor stability over the full operating DC voltage ( -35 dB (from 0.
3) Capsule Silicon Capacitor
(DC) 1oF, 1200Volts 10Nos.
Last but not least, the High Temperature Silicon Capacitor
range has been specifically designed to be mounted in high temperature MCMs, with Aluminum pads to be fully compliant with wedge aluminum bonding.
Thus, the speed degradation caused by these bulk silicon capacitors
is absent in a UTSi MOSFET, making a UTSi MOSFET's speed less supply voltage dependent than its bulk silicon counterpart.
The company is dedicated to the production of cutting-edge Integrated Passive Devices, specializing in silicon sub-mounts for lighting and 3D silicon capacitors
for medical, industrial, communication and high reliability applications.
is pleased to welcome IPDiA to the Modelithics Vendor Partner (MVP) Program, and announce the development of three new S-Parameter (SPAR) models for IPDiA ultra-broadband surface mount silicon capacitors
2] at the beginning of the project, the capacitance density for 3D silicon capacitors
has achieved a new world record with a value increased by a factor of 4.
These new silicon capacitors
enable to drastically decrease the overall impedance and offer the best solution for decoupling performances up to 10 GHz frequency range.