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silicon-on-sapphire

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silicon-on-sapphire [′sil·ə·kən ȯn ′sa‚fīr]
(electronics)
A semiconductor manufacturing technology in which metal oxide semiconductor devices are constructed in a thin single-crystal silicon film grown on an electrically insulating synthetic sapphire substrate. Abbreviated SOS.


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Much of the Wrexham firm's recent success is due to the quality of its silicon-on-sapphire pressure sensing technology and its ability to operate at extreme temperatures.
A silicon-on-sapphire technique, being used by RCA in experimental circuits for computers, represents a relatively new approach in the computer industry.
With the capability to integrate over 750,000 gates of CMOS Silicon-On-Sapphire (SOS) random logic (above 1 million equivalent gates with embedded macros), this cell library offers customers the unprecedented high-speed and low power consumption of UTSi technology for a broad range of space applications.
 
 
 
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