silicon-on-sapphire

silicon-on-sapphire

[′sil·ə·kən ȯn ′sa‚fīr]
(electronics)
A semiconductor manufacturing technology in which metal oxide semiconductor devices are constructed in a thin single-crystal silicon film grown on an electrically insulating synthetic sapphire substrate. Abbreviated SOS.
References in periodicals archive ?
A silicon-on-sapphire technique, being used by RCA in experimental circuits for computers, represents a relatively new approach in the computer industry.
A second significant market for sapphire is Silicon-on-Sapphire (SoS) Radio Frequency Integrated Circuits (RFICs).
Offers its Series 400 polymer extrusion melt-pressure transducers, which employ a patented and reportedly unique silicon-on-sapphire design that incorporates an integral strain-gauge bridge and sensing diaphragm directly exposed to polymer melt at operating temperatures up to 750 F.
The platform developed through the LANCE project is distinct from Rubicon's highly regarded ES2 crystal growth technology, which will remain the platform for Rubicon's C-plane sapphire used in the LED industry and R-plane sapphire for Silicon-on-Sapphire RFIC applications.
SAN DIEGO -- Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS integrated circuits (ICs), today announced an exclusive joint development agreement with IBM for the development and manufacture of future generations of Peregrine's patented UltraCMOS[TM] silicon-on-sapphire (SOS) process technology, the industry's highest-performance radio frequency complementary metal-oxide semiconductor (RF CMOS) process.
BOSTON -- The Strategy Analytics RF & Wireless Component service predicts slower growth ahead for CMOS silicon-on-sapphire RF switches in the report, "Peregrine Shipment Milestone Reflects Softer Handset Demand, RF Architecture Shifts.
SAN DIEGO -- Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, today announced it has recently shipped its half-billionth UltraCMOS[TM] RFIC, a milestone which highlights the successful adoption and proliferation of the Company's disruptive UltraCMOS silicon-on-sapphire technology.
Silicon-on-Sapphire (SoS) applications have ramped-up since 2006 with Peregrine take-off and have shown a tremendous start.
SAN DIEGO -- Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs and Rubicon Technology, a leading manufacturer of sapphire substrates and other advanced technology materials, today announced that Rubicon has begun initial production of 8" sapphire wafers for supply to Peregrine for its UltraCMOS[TM] Silicon-on-Sapphire (SOS) semiconductor processing.
The UltraCMOS[TM] silicon-on-sapphire based PE42641 incorporates Peregrine's revolutionary HaRP[TM] technology enhancements to deliver exceptional harmonic results, linearity and overall RF performance: high linearity of +68 dBm IP3 or -110 dBm IMD; harmonics better than -80 dBc, low insertion loss of 0.
Larger diameter (4" to 8") sapphire wafers are increasingly used for high performance LEDs, Silicon-on-Sapphire Radio Frequency Integrated Circuits (RFIC) chips used in cell phones and base stations.
The inherently rad-hard nature of the silicon-on-sapphire substrate makes it highly suitable for space applications requiring performance leadership.