silicon-on-sapphire

silicon-on-sapphire

[′sil·ə·kən ȯn ′sa‚fīr]
(electronics)
A semiconductor manufacturing technology in which metal oxide semiconductor devices are constructed in a thin single-crystal silicon film grown on an electrically insulating synthetic sapphire substrate. Abbreviated SOS.
References in periodicals archive ?
II-2 Review of Major Trends, Drivers & Issues II-3 Growing LTE Deployments Throw the Spotlight on SOS-CMOS Architecture for LTE Devices II-3 Table 1: Growing Telecom Operator Spending On LTE Infrastructure Drives Upstream Market Opportunities for Silicon-on-Sapphire (SOS) at the Semiconductor Level: Global Breakdown of LTE Infrastructure Spending (US$ Million) for Years 2015 & 2020 by Geographic Region/Country (includes corresponding Graph/Chart).
A silicon-on-sapphire technique, being used by RCA in experimental circuits for computers, represents a relatively new approach in the computer industry.
A second significant market for sapphire is Silicon-on-Sapphire (SoS) Radio Frequency Integrated Circuits (RFICs).
The platform developed through the LANCE project is distinct from Rubicon's highly regarded ES2 crystal growth technology, which will remain the platform for Rubicon's C-plane sapphire used in the LED industry and R-plane sapphire for Silicon-on-Sapphire RFIC applications.
Silicon-on-sapphire (SOS) technology incorporates a thin layer of semiconducting silicon grown on an insulating sapphire substrate to achieve guaranteed radiation hardness.
SAN DIEGO -- Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS integrated circuits (ICs), today announced an exclusive joint development agreement with IBM for the development and manufacture of future generations of Peregrine's patented UltraCMOS[TM] silicon-on-sapphire (SOS) process technology, the industry's highest-performance radio frequency complementary metal-oxide semiconductor (RF CMOS) process.
BOSTON -- The Strategy Analytics RF & Wireless Component service predicts slower growth ahead for CMOS silicon-on-sapphire RF switches in the report, "Peregrine Shipment Milestone Reflects Softer Handset Demand, RF Architecture Shifts.
SAN DIEGO -- Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, today announced it has recently shipped its half-billionth UltraCMOS[TM] RFIC, a milestone which highlights the successful adoption and proliferation of the Company's disruptive UltraCMOS silicon-on-sapphire technology.
Silicon-on-Sapphire (SoS) applications have ramped-up since 2006 with Peregrine take-off and have shown a tremendous start.
SAN DIEGO -- Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs and Rubicon Technology, a leading manufacturer of sapphire substrates and other advanced technology materials, today announced that Rubicon has begun initial production of 8" sapphire wafers for supply to Peregrine for its UltraCMOS[TM] Silicon-on-Sapphire (SOS) semiconductor processing.
The UltraCMOS[TM] silicon-on-sapphire based PE42641 incorporates Peregrine's revolutionary HaRP[TM] technology enhancements to deliver exceptional harmonic results, linearity and overall RF performance: high linearity of +68 dBm IP3 or -110 dBm IMD; harmonics better than -80 dBc, low insertion loss of 0.
Larger diameter (4" to 8") sapphire wafers are increasingly used for high performance LEDs, Silicon-on-Sapphire Radio Frequency Integrated Circuits (RFIC) chips used in cell phones and base stations.