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strained silicon

   Also found in: Wikipedia 0.01 sec.
strained silicon
A technique that deposits silicon (Si) on top of silicon germanium (SiGe) for making transistors on a chip. In so doing, the silicon atoms are stretched ("strained") to line up with the silicon germanium atoms, which are wider apart. This causes less resistance in the silicon and increases performance. AmberWave Systems Corporation, Salem, NH (www.amberwave.com) is a pioneer in this technology. In 2003, IBM announced it could make strained silicon with silicon crystals instead of germanium, making it considerably easier to manufacture. See silicon germanium.

Strained Silicon
When the silicon is adhered to the silicon germanium, the silicon atoms are stretched.
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Here researchers in chemistry, materials, physics, and other disciplines report their research and review the literature on such aspects as the nano-scale characterization and spectroscopy of strained silicon, bone inspired nanocomposites, ultra-nanocrystalline diamond/amorphous carbon nanocomposite films, periodic non-oxide semiconductor-based organic-inorganic nanocomposites, and flexible transparent conducting nanocomposites.
New research on nanocomposites by SciTech Book News
Intel's 65nm processes combine higher-performance and lower-power transistors, a second-generation version of Intel's strained silicon, eight high-speed copper interconnect layers and a low-k dielectric material, the company claims.
Intel develops low power manufacturing process by Worldwide Computer Products News
The deal gives AMCC access to all of the advanced copper, SOI, strained silicon, and low-k chip making processes and the system on a chip technologies that IBM will be developing for future devices and systems.
IBM Sells Off PowerPC 400 Chips to AMCC for $227m by Morgan, Timothy Prickett / Computergram International
 
 
 
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