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transconductance

   Also found in: Acronyms, Wikipedia 0.02 sec.
transconductance [¦tranz·kən′dək·təns]
(electronics)
An electron-tube rating, equal to the change in plate current divided by the change in control-grid voltage that causes it, when the plate voltage and all other voltages are maintained constant. Also known as grid-anode transconductance; grid-plate transconductance; mutual conductance. SymbolizedGm;gm.
A field-effect-transistor rating, equal to the change in drain current divided by the change in gate-to-source voltage that causes it, when the drain voltage and all other voltages are maintained constant. Symbolizedgfs.
An amplifier parameter, equal to the change in output current divided by the change in input voltage that causes it. Symbolizedgm.


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Formed on a large diameter silicon substrate, the gallium nitride high electron mobility transistor (GaN-HEMT) achieves a world record transconductance rating of 350mS/mm, a maximum oscillation frequency of 115GHz and a current gain cut off frequency of 56GHz, which are all comparable to figures achieved on conventional silicon carbide (SiC) substrates.
The researchers will report in the October IEEE ELECTRON DEVICE LETTERS that the transconductance of their devices is 40 percent higher than that reported for other silicon devices operating at room temperature and is comparable to that of gallium arsenide devices (which have been pursued largely because they promised greater performance and faster speeds than their silicon counterparts).
WiCkeD allowed ZMD designers to meet the challenging performance goals of a new type of High Gain Transconductance Amplifier (OTA) with initially 190 active devices, being the most critical part of a 14-bit ADC.
 
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