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transconductance

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transconductance [¦tranz·kən′dək·təns]
(electronics)
An electron-tube rating, equal to the change in plate current divided by the change in control-grid voltage that causes it, when the plate voltage and all other voltages are maintained constant. Also known as grid-anode transconductance; grid-plate transconductance; mutual conductance. SymbolizedGm;gm.
A field-effect-transistor rating, equal to the change in drain current divided by the change in gate-to-source voltage that causes it, when the drain voltage and all other voltages are maintained constant. Symbolizedgfs.
An amplifier parameter, equal to the change in output current divided by the change in input voltage that causes it. Symbolizedgm.
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With hundreds of pages of examples from operational transconductance amplifiers to micropower CMOS preamplifiers and future technologies, this classroom text for advanced electrical engineering students doubles as a self-study guide for practitioners.
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Formed on a large diameter silicon substrate, the gallium nitride high electron mobility transistor (GaN-HEMT) achieves a world record transconductance rating of 350mS/mm, a maximum oscillation frequency of 115GHz and a current gain cut off frequency of 56GHz, which are all comparable to figures achieved on conventional silicon carbide (SiC) substrates.
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