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tunneling magnetoresistance |
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tunneling magnetoresistance [‚tən·əl·iŋ mag‚ned·ō·ri′zis·təns]
(solid-state physics) A type of magnetoresistance displayed by a trilayer thin-film structure consisting of two metallic ferromagnetic thin films sandwiching an insulating film that is thin enough (less than about 2 nanometers) that electrons can pass through it via quantum-mechanical tunneling. Also known as junction magnetoresistance. Want to thank TFD for its existence? Tell a friend about us, add a link to this page, add the site to iGoogle, or visit the webmaster's page for free fun content. |
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