RDIMM

(redirected from unbuffered DIMM)

RDIMM

(Registered DIMM) A dual in-line memory module (DIMM) with improved reliability. The RDIMM, which became available for DDR3 memory, uses a hardware register that buffers the control signals (not the application data) to the modules. The buffering adds a clock cycle and uses more power but handles the heavier electrical loads placed on high-speed, high-density memory modules better than the traditional DIMM, or "unbuffered DIMM" (UDIMM). RDIMMs also support Chipkill/SDDC memory (see chipkill). When two or more DIMMs are used per memory channel, RDIMMs typically provide greater performance than UDIMMs, but the motherboard documentation must be consulted to determine which modules can be used. See memory module and SDRAM.
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Also, they can be used to meet market demand for DDR2 4GB unbuffered DIMM for PCs and 4GB SO-DIMM for notebook PCs.
Cuatro ranuras Unbuffered DIMM con soporte Dual Channel, soporta hasta 4GB de memoria DDR 266/333/400MHz y 433/466 /500/533MHz con overclocking, ranura AGP 4X/8X, cinco ranuras PCI, controlador integrado Ultra DMA 66/100 IDE para hasta cuatro dispositivos IDE, controlador integrado Serial ATA/150 para dos dispositivos SATA, audio integrado de seis canales, adaptador Gigabit LAN integrado, chipset Intel 865PE / ICH5 PUERTOS Abit KV8-MAX3.
Cuatro ranuras Unbuffered DIMM con soporte Dual Channel, soporta hasta 4GB de memoria DDR 266/333/4000MHz y 433/466/500/533MHz co overclocking, ranura AGP 4X/8X, cinco ranuras PCI, controlador integrado Ultra DMA 66/100 IDE para hasta cuatro dispositivos IDE, controlador integrado Serial ATA/150 para dos dispositivos SATA, audio integrado de seis canales, adaptador Gigabit LAN integrado, chipset Intel 865PE / ICH5
512M bit DDR3 SDRAM EDJ5308BASE-AC-E/AE-E: DDR3-1066 (7-7-7) EDJ5308BASE-8A-E: DDR3-800 (5-5-5) -- 1GB DDR3 unbuffered DIMM EBJ11UD8BAFA-AE-E: DDR3-1066 (7-7-7) EBJ11UD8BAFA-8A-E: DDR3-1066 (7-7-7) -- 512MB DDR3 unbuffered DIMM EBJ51UD8BAFA-AE-E: DDR3-800 (5-5-5) EBJ51UD8BAFA-8A-E: DDR3-800 (5-5-5)
These components provide the foundation for Micron's line of registered and unbuffered DIMM modules ranging in densities from 128MB to 4GB.
DDR chips configured in two rows, are half the size of an unbuffered DIMM (Dual Inline Memory Module) used in desktop PCs.
Samsung leads industry in Intel DDR200/266 validations -- Samsung leads in Intel DDR200/266 SDRAM component-level validation by ratio of 16 to 6 -- Samsung leads in Intel DDR200/266 registered DIMM system-level validation by ratio of 13 to 5 -- Samsung leads in Intel DDR200/266 unbuffered DIMM system-level validation by ratio of 19 to 4 -- Samsung leads in Intel DDR200/266 unbuffered SO-DIMM system-level validations
The 1GB unbuffered DIMM uses 18 pieces of 512Mb components configured as 64M x 8.
NYSE:MU) today announced the availability of PC2100 CAS Latency 2 (CL2) DDR SDRAM registered and unbuffered DIMM modules in 128MB and 256MB densities.
Samples of industry-standard 256MB SODIMM (MT8LSDT3264HG), 512MB Unbuffered DIMM (MT16LSDT6464AG), 512MB Unbuffered DIMM with ECC (MT18LSDT6472AG), 512MB registered DIMM (MT18LSDT6472G), and 1GB Registered DIMM (MT36LSDT12872G) modules, designed for operation at 133MHz bus speeds, are anticipated next quarter.
Samples of PC2100 256MB DDR SDRAM SODIMM (MT8VDDT3264HG), 512MB Unbuffered DIMM (MT16VDDT6464AG), 512MB Unbuffered DIMM with ECC (MT18VDDT6472AG), 512MB Registered DDR SDRAM DIMM (MT18VDDT6472G), and 1GB Registered DDR SDRAM DIMM (MT36VDDT12872G) modules will be available next quarter.