vertical ballistic transistor

vertical ballistic transistor

[¦vərd·i·kəl bə‚lis·tik tran′zis·tər]
(electronics)
A transistor in which, ideally, electrons traverse ballistically (that is without scattering) a very short region that separates a cathode from an anode, and whose effective cross section is modulated by the potential of metal gate contacts.