Range -20 C +85 C Read Access Time 100 ns Read Cycle Time Write Cycle
Time 150 ns Data Retention Period over 10 years Write Cycle
endurance over 1010 (10 billion cycles) Package TSOP-48
5V) write cycle
time and 16-byte page write options enable faster writes to the device.
In addition, Motorola's devices consume 40 percent less current during a read or write cycle
when compared to existing 1-Megabit late write devices currently on the market.
This new Atmel low-voltage, nonvolatile memory offers designers read access speeds to 200 nanoseconds with page write cycle
times of 10 milliseconds.
In addition to offering greater endurance, FRAM memory from Ramtron, which uses a thin film ferroelectric material to create its nonvolatile element, also offers faster write cycle
times than competing products (200 nanoseconds, or billionths of a second, instead of 10 milliseconds, or millionths of a second, for EEPROM), completely random access, and single 5 volt operation within the device.
Time: The AT24C164 offers a write cycle
time of ten milliseconds and is available as fast as one millisecond (typical) with special testing.
The result of having a single write cycle
is dramatically increased throughput for RFID label printers and applicators, and for assembly lines.
As per Flash memory specifications, it can be determined that the write cycle
endurance of a 16GB L's PuRAM-GO(TM) Drive is abound 157 years at 1TB worth of writes per day, more than 100 times the lifespan of an average hard drive.
3 volt device featuring 35 nanosecond read and write cycle
It is also not significantly impacted by the number of write cycles
it can endure, which makes it more durable.
With FRAM providing write cycles
up to 33,000-times faster than conventional EEPROM memories the latest IN Tag transponder enables much faster accesses than EEPROM memory-based tags.
In comparison a top-tier SLC-based SSD can endure up to 100,000 write cycles