Hybrid Memory Cube

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Hybrid Memory Cube

A memory module technology from the Hybrid Memory Cube Consortium (HMCC), spearheaded by Micron and Samsung, that stacks chips vertically rather than horizontally. Finalized in 2013, Hybrid Memory Cubes (HMCs) provide 15 times the bandwidth of DDR3 chips while consuming 70% less power and 90% less space. Like DRAM, HMCs lose their content without power.

Initially used in supercomputers and high-speed servers, HMC memory is expected to migrate to all types of computing devices. See dynamic RAM, memory module and via.


3D Stacking
DRAM layers are stacked over a logic layer and connected with "vias" (corner cutout) that run through the silicon. This compact architecture is faster and more energy efficient than conventional DRAM modules. (Image courtesy of the HMC Consortium, www.hybridmemorycube.org)
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Matrix Semiconductor, Inc.--a developer of high-density, three-dimensional semiconductors--has announced that the Company's Matrix 3-D Memory technology (3DM) has received the MultiMediaCard Association's (MMCA) first ROM (Read Only Memory) card certification.
The technology is called Matrix 3-D Memory, since the card is created by building a semiconductor product in three dimensions, which decreases the wafer area of each chip to achieve significant cost reduction.
Of course, the marketing question is how low priced would a Matrix 3-D memory card have to be to attract consumers.
"Matrix 3-D Memory will be a first, very important step in commercializing 3-D semiconductor technology.
Steere says, "Matrix 3-D Memory combines the small size, ruggedness, reliability, battery efficiency, and low system cost of solid-state electronics with the density and low cost per bit of small, rotating disk drives.
Major brand-name suppliers and manufacturers of memory media will market memory cards based on Matrix 3-D Memory technology this year.
Three of the primary suppliers of 3-D memory devices have taken different design routes in the fabrication of their products.
Cubic Memory fabricates 3-D memory devices by cutting memory segments from whole silicon wafers, thinning them, and then stacking them between polyamide insulating layers.
This process also is used to fabricate 3-D memory devices for the ultrathin memory cards placed into the PCMCIA slots of portable computers.
Staktek uses two procedures - Uniframe and Ribcage - to fabricate its stacked 3-D memory modules.