FinFET is a double gate 3D transistor
and has more benefits than ones of traditional planar CMOS.
"Samsung's new 10nm FinFET process (10LPE) adopts an advanced 3D transistor
structure with additional enhancements in both process technology and design enablement compared to its 14nm predecessor, allowing up to 30-percent increase in area efficiency with 27-percent higher performance or 40-percent lower power consumption.
Samsung says that the new 10nm FinFET process (10LPE) adopts an advanced 3D transistor
structure with additional enhancements in both process technology and design enablement.
broader range of differentiated leading-edge 3D transistor
and RF technologies,
"We can now offer our customers a broader range of differentiated leading-edge 3D transistor
and radio frequency (RF) technologies, and we will also improve our design ecosystem to accelerate time-to-revenue for our customers.
The company will be able to offer its customers a greater choice of 3D transistor
and RF technologies, as well as to bolster its design ecosystem.
20nm Roadmap at TSMC and UMC Stock code 2303 2330 Company UMC TSMC Development Acquire IBM licensing Pilot production status on 20nm and FinFET projected late 3D transistor
this year or processes early next year.
The Tri-Gate 3D transistor
will provide a big boost to Intel's x86 architecture against ARM is whatDoug Freedman, analyst at Gleacher & Company, says will happen..
Intel's 3D transistor
technology, or Tri-Gate, is expected in 22nm Ivy Bridge processors that are scheduled to arrive by the end of 2011.
Ivy Bridge will be Intel's first high-volume chip that's based on the 22 nm process, and uses 3D transistor
design called Tri-Gate.