Rzhanov, Anatolii Vasil’evich
Born Apr. 9, 1920, in Ivanovo. Soviet physicist. Corresponding member of the Academy of Sciences of the USSR since 1962. Member of the CPSU since 1943.
Rzhanov graduated from the Leningrad Polytechnic Institute in 1941. From 1944 to 1962 he worked at the Institute of Physics of the Academy of Sciences of the USSR, and since 1962 he has been the director of the Institute of Semiconductor Physics of the Siberian Division of the Academy of Sciences of the USSR. Since 1963 he has also taught at the University of Novosibirsk (he became a professor in 1966).
Rzhanov’s main work has been devoted to the physics of dielectrics and semiconductors and to semiconductor electronics. He discovered and studied the piezoelectric effect in polarized barium titanate ceramics, and he produced and conducted research on samples of point-contact and fused germanium diodes and triodes. He has studied volume and surface recombination in semiconductors and the origin and properties of surface electron states. He has been awarded two orders, as well as several medals.