By using our specially designed dots, we can avoid energy losses created by Auger recombination
Auger recombination and the temporal dynamics related to the photonic interaction in the sample may receive an important energy contribution that could modify the valence band electron density, automatically affecting the absorption as a function on the irradiance.
Linnros, "Biexciton emission as a probe of auger recombination in individual silicon nanocrystals," The Journal of Physical Chemistry C, vol.
The dismal performance of b-Si solar cells is mainly due to the enhanced surface recombination and Auger recombination in wafer-based nanostructured silicon solar cells .
The surface doping concentration of bSi solar cells was 9.6 x [10.sup.20] [cm.sup.-3] , which means the Auger recombination associated with heavily doped emitter shows a significant influence on the electrical performance of bSi solar cells .
Nevertheless, the IQE between 350-500 nm of the S3 cell is slightly lower than that of S2 cell, which can be explained as follows: (1) the surface state density at Si-Si[O.sub.2] interfaces is much lower than that of Si-Si[N.sub.x] interfaces , which leads to the lower surface recombination velocity of S2 cell; (2) the surface doping concentration of S2 is reduced by thermal oxidation process which leads to the suppressing Auger recombination. The S4 cell exhibits the highest IQE at broad band of wavelength which may be assigned to the more effective passivation of Si[O.sub.2]/Si[N.sub.x]:H stacks film.
These equations consider generation computed using the transfer matrix method, and radiative, Shockley-Read-Hall and Auger recombination
using standard recombination formalisms ; surface recombination is implemented at the relevant heterointerfaces and is discussed in more detail in Section 3.3.