band gap

(redirected from Bandgap energy)

band gap

[′band ‚gap]
(solid-state physics)
An energy difference between two allowed bands of electron energy in a metal.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.

bandgap

In a material, the energy difference between its non-conductive state and its conductive state. There is virtually no bandgap in most metals, but a very large one in an insulator (dielectric). In a semiconductor, the bandgap is small. Technically, the bandgap is the energy it takes to move electrons from the valence band to the conduction band.
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References in periodicals archive ?
The bandgap energy of the majority varied around 8 eV, except for the malation and terbufos, with values below.
Assuming that the solar cell is at room temperature [T.sub.c] = 300 K, the non-ideality factor f = 1/2, and the bandgap wavelength is [[lambda].sub.g] = 1.53 nm (corresponding to the bandgap energy of [E.sub.g] = 0.81 eV), the solar cell efficiency of our structure can be calculated.
The characteristics of Sb[I.sub.3] include high atomic number (Sb: 51, I: 53), high density (4.92 g/cm), and wide bandgap energy (2.2 eV).
To calculate bandgap energy values, graphs were plotted between [alpha], [([alpha]hv).sup.2], and [([alpha]hv).sup.1/2] as a function of hv.
The bandgap energy was determined with a Helios Alpha UV-Vis spectrometer (Thermo Electron) with a wavelength range of 290-800 nm.
in 2006 [9], the external quantum efficiency (EQE) of solar cell is related to the bandgap energy and frontier molecular orbital energy levels under the assumptions that any contribution to the short-circuit current from photons absorbed by the fullerene is neglected and the FF is set to 65%.
The bandgap energy determines which semiconductor material can be activated by the light of different wavelengths.
It has been found that the dark current increases with increasing temperature due to the influence of bandgap energy [20].
Silicon's low efficiency is partly due to its bandgap energy, which prevents it from efficiently converting higher-energy photons (e.g.
At room temperature, p-type TCOs either show high resistance or exhibit less optical bandgap energy. Junctions based electronic devices that are optically transparent such as diodes and transistors demand p-type TCOs with high electrical conductivity and tuneable bandgap [1-4].