BiCMOS technology


Also found in: Acronyms.

BiCMOS technology

[¦bī′sē‚mȯs tek‚näl·ə·jē]
(electronics)
An integrated circuit technology that combines bipolar transistors and CMOS devices on the same chip.
References in periodicals archive ?
A 250 nm SiGe BiCMOS technology, developed at the IHP foundry, is exploited for the circuits design.
In particular the 250 nm SiGe BiCMOS technology from the IHP foundry has been considered as the case of study, this because the space qualification of the SG25H1 process is currently under development.
In this paper, an 8-bit 1 GS/s F&I ADC is designed in a 0,13 [micro]m SiGe BiCMOS technology. It is composed of a high 4-bits flash ADC and low 4-bits F&I ADC.
TU2A-2: Invited: An Analog Baseband Chain for a UMTs Zero-IF Receiver in a 75 GHz SiGe BiCMOs Technology
IFTU-8: Using SiGe Mainstream BiCMOS Technology For X-band and LMDS (25-30 GHz) Microwave Applications
In recent years, silicon germanium (SiGe) BiCMOS technology has become one of the most promising technologies for VCO designs.
This article describes how SiGe BiCMOS technology can benefit integrated VCO design and how the SiGe BiCMOS process is used to develop a family of VCO ICs that meet requirements for GSM, CDMA, WCDMA and wireless LAN applications.
Kumar, et al., "A Simple, High Performance Complementary TESOI BiCMOS Technology with Excellent Cross-talk Isolation and High Q Inductors for Low Power Wireless Applications," 2000 IEEE International SOI Conference, October 2000, pp.
BiCMOS technology, together with extensive research, has allowed integration of the receiver's VCO on the same die providing the most integrated solution in both receive and transmit functions.
It is absolutely necessary to build a strong expertise in this field and to demonstrate that an integrated VCO function in BiCMOS technology shows very competitive performance compared to an external VCO module.
The SiGe BiCMOS technology used in this work has a number of advantages in the design of radio frequency integrated circuits (RFIC).
Higher performance, lower power dissipation and higher level of integration can be further improved by using SiGe BiCMOS technology. SiGe pnp HBTs exhibiting at 38 GHz [f.sub.max][15] and complementary SiGe HBT technology featuring 50 GHz and 13 GHz [f.sub.T] npn/pnp transistors have already been demonstrated.