bipolar junction transistor

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bipolar junction transistor

[¦bī‚pōl·ər ‚jəŋk·shən tran′zis·tər]
(electronics)
A bipolar transistor that is composed entirely of one type of semiconductor, silicon. Abbreviated BJT. Also known as silicon homojunction.
References in periodicals archive ?
Among his topics are material properties, ideal specific on-resistance, junction field effect transistors, silicon carbide planar power metal-oxide-semiconductor field-effect-transistors, silicon carbide bipolar junction transistors, and silicon carbide gate turn-off thyristors.
However, all of them require big-area diodes or parasitic bipolar junction transistors (BJTs) with turn-on voltage as high as 0.
Electronic circuits, employing bipolar junction transistors biased into the avalanche breakdown region are known for many years [1], [2].
The 9812D low-frequency 1/f noise measurement system is designed to measure low-frequency noise characteristics of on-wafer or packaged semiconductor devices, including MOSFETs, bipolar junction transistors (BJTs), junction field effect transistors (JFETs), diodes and diffusion resistors.
1 supplier of small signal devices including small signal bipolar junction transistors, small signal schottky diodes, small signal switching diodes, small signal field effect transistors, and small signal MOSFETs, capable of putting out one billion units a year with factories in Taiwan and mainland China.
Operating in motor drives, DC/DC conversion, welding systems and power electronics, TranSiC's BITSIC-1220 and BITSIC-1206 NPN power bipolar junction transistors are made from silicon carbide.
Karris covers basic electronic concepts and signals, semiconductor electronics, diodes, bipolar junction transistors, field effect transistors and PNPN devices, operational amplifiers, integrated circuits, pulse circuits and waveforms generators, frequency characteristics of single-stage and cascaded amplifiers, tuned amplifiers, sinusoidal oscillators, compensated attenuators, and more.
Devices covered in the text include varactors, Schottky diodes and Schottky diode frequency multipliers, transit-time devices, bipolar junction transistors, heterostructure bipolar transistors, metal-oxide semiconductor field-effect transistors, metal semiconductor field-effect transistors and high electron mobility transistors.
SiC Bipolar Junction Transistors (BJTs), First in the Product Portfolio, Offer Lowest Total Power Losses at High Operation Temperatures
The differential amplifier based on the bipolar junction transistors, which operate at high-current density, is analysed in the work.
While the same must be true for bipolar junction transistors, the effect is mitigated by the bipolar phenomenon of conductivity modulation, whereby operation in the saturation region causes the injection of minority carriers into the collector region, resulting in a commensurate injection of majority carriers to preserve charge neutrality.
It offers a more in-depth understanding of the theory of RF power amplifiers and covers some topics that were barely mentioned previously, such as bipolar junction transistors (BJT) and others that deserve a more detailed treatment.