bipolar junction transistor

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bipolar junction transistor

[¦bī‚pōl·ər ‚jəŋk·shən tran′zis·tər]
(electronics)
A bipolar transistor that is composed entirely of one type of semiconductor, silicon. Abbreviated BJT. Also known as silicon homojunction.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
References in periodicals archive ?
At the frequency of interest, a BJT transistor is represented by an equivalent model with only the junction capacitor [C.sub.[pi]] [approximate] 2[C.sub.jeo] + [g.sub.m][tau]F and the base resistance [r.sub.[pi]] taken into account in the input port, where [C.sub.jeo] is the junction capacitance between base and emitter at zero bias, [g.sub.m] is the transconductance and [[tau].sub.F] is the forward base transit time.
Because of the BiCMOS process employed, the log amplifier can easily be constructed using BJT transistors.