bipolar junction transistor

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bipolar junction transistor

[¦bī‚pōl·ər ‚jəŋk·shən tran′zis·tər]
(electronics)
A bipolar transistor that is composed entirely of one type of semiconductor, silicon. Abbreviated BJT. Also known as silicon homojunction.
References in periodicals archive ?
The new class of BJT transistor is packaged with an exposed tab on the underside for immediate transfer of thermal energy into the PCB and together, with the perforated emitter, allows for much higher currents through the device.
At the frequency of interest, a BJT transistor is represented by an equivalent model with only the junction capacitor [C.sub.[pi]] [approximate] 2[C.sub.jeo] + [g.sub.m][tau]F and the base resistance [r.sub.[pi]] taken into account in the input port, where [C.sub.jeo] is the junction capacitance between base and emitter at zero bias, [g.sub.m] is the transconductance and [[tau].sub.F] is the forward base transit time.
Because of the BiCMOS process employed, the log amplifier can easily be constructed using BJT transistors.