wire bonding

(redirected from Bond wire)

wire bonding

[′wīr ‚bänd·iŋ]
Lead-covered tie used to connect two cable sheaths until a splice is permanently closed and covered.
A method of connecting integrated-circuit chips to their substrate, using ultrasonic energy to weld very fine wires mechanically from metallized terminal pads along the periphery of the chip to corresponding bonding pads on the substrate.
The attachment of very fine aluminum or gold wire (by thermal compression or ultrasonic welding) from metallized terminal pads along the periphery of an integrated circuit chip to corresponding bonding pads on the surface of the package leads.

wire bond

The use of tiny wires that are soldered to the bare chip (bare die) on one end and to metal leads of the chip package on the other. Before the advent of flip chips and solder ball techniques, wire bonding was the traditional interconnection method to and from the chip. See flip chip and chip package.

Wire Bond vs. Flip Chip
In the wire bond method (top), the die faces up and is attached to the package via wires. The flip chip (bottom) faces down and is typically attached via solder bumps. (Image courtesy of Amkor Technology, Inc.)

Wire Bonding
This bare microcontroller chip from Microchip is approximately 4x5mm. It is mounted in this special glass package to show the wire bonds.
References in periodicals archive ?
This paper provides (1) a method for determining an approximate fusing current for a given bond wire, (2) a lossless limiting solution where a large current is applied quickly, and (3) an approximate description for the gapping region (from the test data), when the applied current is approximately more than a factor of two over the fusing current.
In this sense an electromagnetic model for two CPW-Microstrip transitions connected with a bond wire was developed for this work.
The technology itself provides a simple technique for a wide variety of high-magnification X-ray applications to analyze such defects as fine bond wire cracks or tiny voids that occur in flip chip solder balls of merely 25 microns in diameter and display at this extremely high resolution.
It is even possible to perform a pattern recognition step between each bond wire. This is used when each location is critical, and a dependency on alignment fiducials may not be possible.
* Early warnings regarding layout problems and possible bond wire and via electromigration damage prior to the prototype fabrication.
Applications for the xs series nf tube will be in analyzing of defects such as fine bond wire cracks (pictured--a 25 micron bond wire thermically damaged by overcurrent) or tiny voids that occur in flip-chip solder balls that are 25 microns in diameter.
The device is available as a flip-chip die with 500 microns bump pitch, which eliminates high-frequency performance variations due to bond wire length variances.
Once the signal leaves the chip, the propagation (and reflection) is effected by discontinuities at the RDL layer or I/O pad where the signal enters a BGA or bond wire. The signal then encounters another discontinuity on the other side of the connection, at the package (or PCB in a CoB) side.