wire bonding

(redirected from Bond wire)

wire bonding

[′wīr ‚bänd·iŋ]
(electricity)
Lead-covered tie used to connect two cable sheaths until a splice is permanently closed and covered.
(electronics)
A method of connecting integrated-circuit chips to their substrate, using ultrasonic energy to weld very fine wires mechanically from metallized terminal pads along the periphery of the chip to corresponding bonding pads on the substrate.
The attachment of very fine aluminum or gold wire (by thermal compression or ultrasonic welding) from metallized terminal pads along the periphery of an integrated circuit chip to corresponding bonding pads on the surface of the package leads.
References in periodicals archive ?
C36g5b Black Sic-In Resionid Bond Wire Winding Or Similar.
The device is available as a flip-chip die with 500 microns bump pitch, which eliminates high-frequency performance variations due to bond wire length variances.
This paper provides (1) a method for determining an approximate fusing current for a given bond wire, (2) a lossless limiting solution where a large current is applied quickly, and (3) an approximate description for the gapping region (from the test data), when the applied current is approximately more than a factor of two over the fusing current.
It is even possible to perform a pattern recognition step between each bond wire.
Early warnings regarding layout problems and possible bond wire and via electromigration damage prior to the prototype fabrication.
The technology itself provides a simple technique for a wide variety of high-magnification X-ray applications to analyze such defects as fine bond wire cracks or tiny voids that occur in flip chip solder balls of merely 25 microns in diameter and display at this extremely high resolution.
These include the transistor model (FET2 and MET), with package, bond wire, and internal matching network effects.
Once the signal leaves the chip, the propagation (and reflection) is effected by discontinuities at the RDL layer or I/O pad where the signal enters a BGA or bond wire.
Applications for the xs series nf tube will be in analyzing of defects such as fine bond wire cracks (pictured--a 25 micron bond wire thermically damaged by overcurrent) or tiny voids that occur in flip-chip solder balls that are 25 microns in diameter.
High frequency performance may be destroyed in transistor chips produced using this process if the bond wire and lead-out arrangements in the device package are not designed carefully.
The most critical part of a mm-wave hybrid LNA is the bond wire connection to the active device.