CMOS transistor


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CMOS transistor

The most widely used integrated circuit (IC) technology. Although the term CMOS "transistor" is widely used, it is somewhat of a misnomer. There is technically no such thing as a single CMOS "transistor." CMOS "gates," CMOS "logic" or CMOS "circuits" are more accurate terms, because CMOS technology is made up of NMOS and PMOS transistors wired in combination to reduce power consumption. See CMOS and MOSFET.
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Leakage current of CMOS IC--[I.sub.stat] could be defined as a sum of leakage currents of each individual CMOS transistor --[I.sub.leak] that is under the voltage supply
Toshiba has developed a fabrication process for HfSiON gate dielectric film for 65nm low power CMOS applications and confirmed its characteristic with an experimentally fabricated LSI with 50nm gate-length CMOS transistors.
The miniaturization of the CMOS transistor not only makes it possible to improve circuit integration density, but also results in an increasing in the operating speed of integrated circuits.
The leakage current in CMOS transistor depends on various process parameters, the transistor size and the quiescent state of the circuit.
The input impedance ([Z.sub.in]) depends only on the transconductance ([g.sub.m]) of CMOS transistor as shown in (1)
The shortcoming of the method is that it neglects the static power dissipation (due to subthreshold leakage in CMOS transistors) and does not account for power dissipation caused by incomplete logic transitions (glitches).
(2014)employedthe techniqueof boosting the gate-drive voltage of CMOS transistors in pseudo-differential delay cells through the use of quasi-floating gate (QFG) architecture.
The contact resistance and the subthreshold slope of a CNFET are analogous to those of CMOS transistors. The CNFET current is measured in current per tube and can be increased by increasing the number of tubes, while a CMOS current drive is characteristically represented in current per unit device width (e.g., [micro]A/[micro]m) [12].
The schematic diagram of half adder using CMOS transistors is shown in the Fig.
With their fabrication process they have been able to integrate on a single technology platform two levels of advanced CMOS transistors on top of each other using different substrates that have been bonded at low temperature.
TFETs could achieve a 100-fold power reduction over complementary CMOS transistors, so integrating TFETs with CMOS technology could improve low-power integrated circuits.
Bias temperature instability is a pressing concern for advanced geometry CMOS transistors, and it results in shifting transistor performance.