Complementary Metal Oxide Semiconductor

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Complementary Metal Oxide Semiconductor

(integrated circuit)
(CMOS) A semiconductor fabrication technology using a combination of n- and p-doped semiconductor material to achieve low power dissipation. Any path through a gate through which current can flow includes both n and p type transistors. Only one type is turned on in any stable state so there is no static power dissipation and current only flows when a gate switches in order to charge the parasitic capacitance.
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(Complementary Metal Oxide Semiconductor) Pronounced "c-moss." The most widely used integrated circuit fabrication for technology nodes down to 20 nm (see process technology). CMOS chips are found in almost every electronic product from handheld devices to mainframes. CMOS uses PMOS and NMOS transistors wired in a balanced fashion that causes less power to be used (for more details, see MOSFET). The first transistors were bipolar, which are still used when higher power is required. CMOS and bipolar are also used in combination. See FinFET, bipolar transistor and CMOS memory.

A Note From the Author
In the early 1980s, my wife Irma and I had a kitten at the beach I named CMOS. When we introduced her to people, everyone thought "Sea Moss" was such a cute name for a beach cat. However, when we told them CMOS stood for "complementary metal oxide semiconductor," they didn't come around much any more! CMOS didn't last long, as I became quite allergic to her a few months later.

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References in periodicals archive ?
The technologies which are incorporated in smart sensors are Micro-Electro-Mechanical Systems (MEMS), Complementary Metal Oxide semiconductor (CMOS) technology, and Optical spectroscopy.
In an effort to overcome limitations on the further miniaturization of complementary metal oxide semiconductor (CMOS) field-effect transistors, researchers have developed high dielectric constant (k) gate stacks that match the performance of conventional gate dielectrics based on silicon dioxide.
His gates used both nMOS and pMOS transistors, earning the name Complementary Metal Oxide Semiconductor, or CMOS.
IBM's 8HP technology is a 130 nanometer (nm) SiGe bipolar complementary metal oxide semiconductor (BiCMOS) process that offers 2x performance over the previous generation.
(UMC) recently announced it will begin volume production sometime this year of the micro electro mechanical system (MEMS) devices that it has debuted based on off-the-shelf CMOS (complementary metal oxide semiconductor) technology.
CMOS (complementary metal oxide semiconductor) technology is likely to continue to dominate for the next 25 years because of its low cost, reliability, and scalability, according to Baker, who has some 200 circuit design patents either granted or pending, plus a 20-year career as an educator and an engineer.
Compared with Canon's highest-resolution commercial CMOS (complementary metal oxide semiconductor) sensor of the same size, comprising approximately 16.1 million pixels, the newly developed APS-H sensor features a pixel count that, at approximately 120 million pixels, is nearly 7.5 times larger and offers a 2.4-fold improvement in resolution, a company statement said.
SmartBeam offers headlamp automation feature that utilises a custom CMOS (complementary metal oxide semiconductor) image sensor and algorithmic decision-making to automatically switch a vehicle's headlamps between low and high beams according to surrounding traffic conditions.
Information technology company IBM (NYSE:IBM), semiconductor foundries Chartered Semiconductor Manufacturing Ltd (Nasdaq:CHRT) (SGX-ST:CHARTERED) and GLOBALFOUNDRIES, Infineon Technologies AG (NYSE:IFX)(FSE:IFX), a provider of semiconductor and system solutions, electronics company Samsung Electronics Co Ltd and STMicroelectronics (NYSE:STM), a provider of semiconductor solutions , have defined and are jointly developing a 28nm, high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process technology.
The partnership will focus on the development and commercialization of new organic semiconductors and dielectrics for use in CMOS (complementary metal oxide semiconductor)analog printed circuits.
With dimensions of a single molecule on the order of 1 nm, molecular electronics redefines the ultimate limit of miniaturization far beyond that of today's silicon-based complementary metal oxide semiconductor (CMOS) technologies.
The panel utilizes amorphous (non-crystalline) silicon, which makes it more resilient than competing CMOS (complementary metal oxide semiconductor) wafer detectors, and capable of lasting up to five times longer, even in highly demanding round-the-clock semiconductor screening operations."

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