Electrical characterization of CZ (Czochralski
) grown and EFG (edge defined film fed growth) grown sample was carried out by using MMR Hall effect measurement system, which uses Van der Pauw technique.
Wenham, "Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski
silicon," Applied Physics Letters, vol.
Vasiliev, "Low temperature luminescence of ZnMo[O.sub.4] single crystals grown by low temperature gradient Czochralski
technique," Optical Materials, vol.
Ding et al., "Optical and scintillation properties of Ce-doped ([Gd.sub.2][Y.sub.1])[Ga.sub.2.7][Al.sub.2.3][O.sub.12] single crystal grown by Czochralski
method," Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol.
Single crystalline n-type Si (100) grown by Czochralski
method and doped with Sb was used in this work.
All of them belong to noncentrosymmetric space group and most of them have been grown by Czochralski
or Bridgman method successfully.
The 1 x 1 [cm.sup.2] LAO substrates were cut from polished 2 inch wafer, and the LAO crystal ingot was fabricated by using the traditional Czochralski
SBN nanocrystals with varied compositions can be fabricated into different sizes and complex shapes through low-cost and easy methods such as template-assisted synthesis and template-free synthesis, Czochralski
method, dual-stage sintering method, and low-temperature combustion synthesis process [10-13].
Manufactured from high purity alumina (>99.99% purity) by one of the five methods namely Verneuil, Czochralski
(CZ), Heat Exchanger Method (HEM), Edge-Defined Film-Fed Growth (EFG) and Kyropoulos, where EFG and Kyropoulos methods are most popular and are mostly modified in-house to increase the yield.
Sol gel method, homogeneous sol coated on substrate method has a lot of, common with Czochralski
method, spin coating or spraying method, after pulling, dry and repeats the process, thicker films are formed.
Topsil supplies ultrapure float zone and Czochralski
silicon substrates for the global semiconductor industry.
The facility has been consolidated into a cost effective R/D, technology demonstration and training center for future licensees of the company's continuous Czochralski
silicon crystal ingot manufacturing technology.