Czochralski process

(redirected from Czochralski method)

Czochralski process

[chə′kräl·skē ‚präs·əs]
(crystallography)
A method of producing large single crystals by inserting a small seed crystal of germanium, silicon, or other semiconductor material into a crucible filled with similar molten material, then slowly pulling the seed up from the melt while rotating it.
References in periodicals archive ?
The LFS scintillation crystals will be supplied by the Beijing Opto-Electronics Technology Company (BOET), a subsidiary of North-China Research Institute of Electronics-Optics an industry leader in growing, cutting, polishing and large-scale production of scintillation crystals grown by the Czochralski method.
Sol gel method, homogeneous sol coated on substrate method has a lot of, common with Czochralski method, spin coating or spraying method, after pulling, dry and repeats the process, thicker films are formed.
Growth of single crystal with a gradient of concentration of impurities by the Czochralski method using additional liquid charging," Journal of Crystal Growth, Volume 311, Issue 4: 1190-194.
The growth of dislocation free silicon single crystals by the Czochralski method and crucibleless zone melting is characterised by the formation of structural imperfections, referred to as growth microdefects.
In this article, we propose a new diffusion model of the formation of growth microdefects based on the experimental investigations of unalloyed dislocation-free single crystals of silicon grown by the Czochralski method and by the method of crucibleless zone melting.
Main material for production of photoelectric converters (PEC) is multi- (58 %) and single crystal (32 %) silicon, produced according to Czochralski method.
In the Czochralski method a LiF seed crystal of known orientation is dipped into molten LiF and slowly drawn out, allowing the melt to crystallize on it.
Single crystallization of Ba8AlxSi46-x clathrate by using flax Czochralski method Yusuke Nakakohara
BOET is an industry leader in growing, cutting, polishing and large scale production of scintillation crystals grown by the Czochralski method.
The float zone method is far more complex and expensive than the Czochralski method and hence is used mainly for producing power electronics devices requiring especially high purity, defect-free silicon wafers.
SensArray will optimize an already demonstrated effect in Phase I of the SBIR program by what is known as the Czochralski method.
Confluence's HiCz[TM] technology is expected to drive down the cost of monocrystalline wafers below traditional Czochralski methods while enabling flexible production of advanced materials used in next generation cell architectures.